? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 200 v v dgr t j = 25 c to 175 c, r gs = 1m 200 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c32 a i dm t c = 25 c, pulse width limited by t jm 64 a i a t c = 25 c16 a e as t c = 25 c 250 mj dv/dt i s i dm , v dd v dss , t j 175c 10 v/ns p d t c = 25 c 200 w t j - 55 ... +175 c t jm 175 c t stg - 55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 3 a t j = 150 c 200 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 78 m trench tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier IXTA32N20T ixtp32n20t v dss = 200v i d25 = 32a r ds(on) 78m ds99959b(10/10) features z international standard packages z 175c operating temperature z avalanche rated z low r ds(on) z fast intrinsic rectifier z high current handling capability advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications g = gate d = drain s = source tab = drain to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA32N20T ixtp32n20t symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 18 30 s c iss 1760 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 212 pf c rss 31 pf t d(on) 14 ns t r 18 ns t d(off) 55 ns t f 31 ns q g(on) 38 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 12 nc q gd 13 nc r thjc 0.75 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 32 a i sm repetitive, pulse width limited by t jm 128 a v sd i f = i s , v gs = 0v, note 1 1.2 v t rr 110 ns i rm 6.90 a q rm 0.38 nc notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 0.5 ? i d25 , v gs = 0v -di/dt = 100a/ s v r = 0.5 ? v dss ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline
? 2010 ixys corporation, all rights reserved IXTA32N20T ixtp32n20t fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 28 32 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 5v 6v 7v fig. 3. output characteristics @ t j = 150oc 0 4 8 12 16 20 24 28 32 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 v ds - volts i d - amperes v gs = 10v 8v 7v 5 v 6 v fig. 4. r ds(on) normalized to i d = 16a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 32a i d = 16a fig. 5. r ds(on) normalized to i d = 16a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 50 55 60 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 4 8 12 16 20 24 28 32 36 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA32N20T ixtp32n20t fig. 7. input admittance 0 10 20 30 40 50 60 70 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 50 55 60 65 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 100v i d = 16a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limits 10ms
? 2010 ixys corporation, all rights reserved IXTA32N20T ixtp32n20t fig. 14. resistive turn-on rise time vs. drain current 8 10 12 14 16 18 20 16 18 20 22 24 26 28 30 32 i d - amperes t r - nanoseconds r g = 10 ? v gs = 15v v ds = 100v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 5 10 15 20 25 30 35 40 45 10 14 18 22 26 30 34 38 42 46 50 r g - ohms t r - nanoseconds 13 14 15 16 17 18 19 20 21 22 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 16a i d = 32a fig. 16. resistive turn-off switching times vs. junction temperature 16 18 20 22 24 26 28 30 32 34 36 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 44 46 48 50 52 54 56 58 60 62 64 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = 15v v ds = 100v i d = 16a i d = 32a fig. 17. resistive turn-off switching times vs. drain current 14 18 22 26 30 34 38 16 18 20 22 24 26 28 30 32 i d - amperes t f - nanoseconds 46 48 50 52 54 56 58 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v gs = 15v v ds = 100v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? v gs = 15v v ds = 100v 16a < i d < 32a fig. 18. resistive turn-off switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 100 10 14 18 22 26 30 34 38 42 46 50 r g - ohms t f - nanoseconds 10 30 50 70 90 110 130 150 170 190 210 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 100v i d = 32a i d = 16a
ixys reserves the right to change limits, test conditions, and dimensions. IXTA32N20T ixtp32n20t ixys ref: ixt_32n20t (3g)4-14-10-a fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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